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Volumn 240, Issue 1-3, 2002, Pages 417-419

Electronic properties of the Fe/GaAs(0 0 1) interface

Author keywords

Electronic structure; Fe GaAs(1 0 0); Schottky barrier; Transition metal semiconductor heterostructures

Indexed keywords

DIMERS; ELECTRON TUNNELING; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); IRON; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036465131     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(01)00878-2     Document Type: Article
Times cited : (5)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.