Effects of spin relaxation on electron tunneling through single discrete levels in magnetic tunnel junctions

Journal of Magnetism and Magnetic Materials

Volumn 240, Issue 1-3, 2002, Pages 124-126

  Rudzinski W ^a   Barna, J ^a,b  

^a ADAM MICKIEWICZ UNIVERSITY   (Poland)

^b INSTITUTE OF MOLECULAR PHYSICS   (Poland)

Author keywords

Magnetoresistance; Quantum dots; Sequential tunneling

Indexed keywords

FERROMAGNETIC MATERIALS; MAGNETIC RELAXATION; MAGNETORESISTANCE; SEMICONDUCTOR QUANTUM DOTS; TUNNEL JUNCTIONS;

MAGNETIC TUNNEL JUNCTIONS;

ELECTRON TUNNELING;

EID: 0036465096     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(01)00732-6     Document Type: Article

References (5)