Spin accumulation and cotunneling effects in ferromagnetic single-electron transistors

Journal of Magnetism and Magnetic Materials

Volumn 240, Issue 1-3, 2002, Pages 143-145

  Martinek, Jan ^a,b   Barna, Józef ^a,c   Maekawa, Sadamichi ^b   Schoeller, Herbert ^d,e   Schön, Gerd ^d,f  

^a INSTITUTE OF MOLECULAR PHYSICS   (Poland)

^b TOHOKU UNIVERSITY   (Japan)

^c ADAM MICKIEWICZ UNIVERSITY   (Poland)

^d KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^e RWTH AACHEN UNIVERSITY   (Germany)

^f UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

Coulomb blockade; Single electron tunneling; Tunnel magnetoresistance

Indexed keywords

COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; ELECTROCHEMICAL ELECTRODES; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; MAGNETIC RESONANCE; MAGNETORESISTANCE; TRANSISTORS;

TUNNEL MAGNETORESISTANCE (TMR);

FERROMAGNETIC MATERIALS;

EID: 0036464916     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(01)00766-1     Document Type: Article

References (11)