Structural and optical properties of InGaN/GaN multi-quantum well structures with different well widths

Materials Research Society Symposium - Proceedings

Volumn 722, Issue , 2002, Pages 193-198

  Kim, Young Hoon ^c   Kim, Chang Soo ^a   Noh, Sam Kyu ^a   Leem, Jae Young ^a   Lim, Kee Young ^b   Byung Sung, O ^c   Song, Jay P ^d  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Chonbuk National University   (South Korea)

^c Chungnam National University   (South Korea)

^d SongJee Industrial Corporation   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS; STRAIN; X RAY DIFFRACTION ANALYSIS;

MULTIPLE QUANTUM WELLS (MQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036458660     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-722-k7.12     Document Type: Conference Paper

References (9)

1. O. Ambacher, J. Phys. D: Appl. Phys. 32, 2653 (1998).
2. J. Bai, T. Wang, and S. Sakai, J. Appl. Phys. 88, 4729 (2000).
3. J.W. Matthews and A.E. Blackeslee, J. Crystal Growth 32, 256 (1974).
4. Wei Li, Peder Bergman, Ivan Ivanov, Wei-xin Ni, H. Amano and I. Akasa, Appl. Phys. Lett. 69, 3390 (1996).
5. D. Kapolnek, X.H. Wu, B. Heying, S. Keller, B.P. Keller, U.K. Mishra, S.P. DenBaars and J.S. Speck, Appl. Phys. Lett. 67, 1541 (1995).
6. Gunther Bauer and Wolfgang Richter, Optical Characterization of Epitaxial Semiconductor Layer (Springer, New York, 1996), pp. 294-298.
7. Paul F. Fewster, X-Ray Scattering from Semiconductors (Imperial College Press, London, 2000), pp. 244-253.
8. A. Fischer, H. Kuhne and H. Richter, Phys. Rev. Lett. 73, 2712 (1994).
9. H. Liu, J.G. Kim, M.H. Ludwig and R.M. Park, Appl. Phys. Lett. 71, 347 (1997).