Improvements in MoSi EAPSM CD bias and iso-dense linearity plasma etch results utilizing design of experiments process optimization of gen III ICP plasma source

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4754, Issue , 2002, Pages 291-302

  Plumhoff, Jason ^a   Constantine, C ^a   Shin, J ^a   Rausa, E ^a  

^a Unaxis USA Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MASKS; OPTIMIZATION; PHASE SHIFT; PLASMA DENSITY; PLASMA ETCHING; PLASMA SOURCES; POLYMERIZATION; SEMICONDUCTING SILICON;

MASK PATTERNS;

INDUCTIVELY COUPLED PLASMA;

EID: 0036458398     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.476973     Document Type: Conference Paper

References (4)

1. J. Plumhoff, et al., Investigation of MoSi etch processes for embedded attenuating phase shift mask applications utilizing a next-generation ICP source, SPIE Proc, 4562, 694, (2001).
2. 2He plasmas, SPIE Proc, 4562, 561, (2001).
3. C. Constantine, et al., Inductively Coupled Plasma Etch of DUV MoSi Photomasks: A Designed Study of Etch Chemistries and Process Results, SPIE Proc, 3546, 88 (1998).
4. ITRS Roadmap, 2001.