An impact ionization model for SOI circuit simulation

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 201-202

  Su, Pin ^a   Fung, S K H ^a   Wan, H ^a   Niknejad, A ^a   Chan, M ^a   Hu, C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC FIELD EFFECTS; IMPACT IONIZATION; MOSFET DEVICES;

SILICON BANDGAP;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036458326     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. P. Su et al., IEEE EDL, September 2002.
2. J. Park et al., IEEE Int'l. SOI Conf., p. 147, 2001.
3. P. Su et al., IEEE Int'l. SOI Conf., p. 31, 2001.
4. C. Hu et al., IEEE TED, vol. ED-32, p. 375, 1985.
5. www-device.eecs.berkeley.edu/̃bsimsoi.