Laser scattering characterization of SOI wafers: Real threshold assessment and sizing accuracy

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 194-195

  Maleville, Christophe ^a   Moulin, C ^a   Neyret, E ^a   Cauble, C ^b   Cheung, L ^b   Moirin, R ^b  

^a PARC TECHNOLOGIQUE DES FONTAINES   (France)

^b KLA TENCOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; LASER BEAM EFFECTS; LIGHT SCATTERING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; ULTRATHIN FILMS;

LASER SCATTERING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036456790     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2002.1044473     Document Type: Conference Paper

References (3)

1. http://public.itrs.net.
2. TBI, Aug 00, Andrew Zeng et al.
3. C. Maleville et al., 2000 SOI conference, p. 19.