Simulation of transmittance on the effect of resolution enhancement of 100 nm pattern with attenuated phase-shifting mask in 193 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4754, Issue , 2002, Pages 437-443

  Lin, Cheng Ming ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Attenuated phase shifting mask; Contact hole; Dark tone; High transmittance; Normalized image log slope; Resolution enhancement; Side lobes

Indexed keywords

ATTENUATION; COMPUTER SIMULATION; ELECTRIC FIELDS; LIGHT TRANSMISSION; MASKS; OPTICAL RESOLVING POWER; PHASE SHIFT;

CONTACT HOLES;

LITHOGRAPHY;

EID: 0036456758     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.476986     Document Type: Conference Paper

References (5)

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3. J.F. Chen et al., Microlithography World, Summer, p. 12 (2000).
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5. C.M. Lin and W.A. Loong, Jpn. J. Appl. Phys., Part 1, No. 6B, 2002. accepted.