A comparative approach of low frequency noise in 0.25 and 0.12 μm partially and fully depleted SOI N-MOSFETs

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 105-106

  Dieudonne F ^a   Haendler, S ^a   Jomaah, J ^a   Balestra, F ^a  

^a Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; MOSFET DEVICES; NATURAL FREQUENCIES; SPURIOUS SIGNAL NOISE; SUBSTRATES;

LOW FREQUENCY NOISE (LFN);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036456292     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S. Haendler et al., Int. SOI Conf.'2000, Proc., 126-127.
2. S. Haendler et al., JJAP, 2000, vol. 39: pp. 2261-2263.
3. Simoen E. et al., SSE, 1996, vol. 39: pp. 949-960.
4. S. Christensson et al., SSE, 1968, vol. 11: pp.797-812.