Tendency for full depletion due to gate tunneling current

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 140-142

  Wan, Hui ^a   Fung, Samuel K H ^b   Su, Pin ^a   Chan, Mansun ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRON TUNNELING; MOSFET DEVICES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS;

TUNNELING CURRENTS;

GATES (TRANSISTOR);

EID: 0036454483     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. S.K.H. Fung et al., IEDM, p231, 2000.
2. Pin Su, work on BSIMSOI.