Etching selectivity and surface profile of attenuated phase shifting mask using CF4/O2/He inductively coupled plasma (ICP)

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4754, Issue , 2002, Pages 332-340

  Yoon, Si Yeul ^a   Choi, Se‐Jong ^a   Kim, Young‐Dae ^a   Lee, Dong‐Hyuk ^a   Cha, Han‐Sun ^a   Kim, Jin‐Min ^a   Choi, Sang‐Soo ^a   Jeong, Soo Hong ^a  

^a Photomask R and D Center   (South Korea)

Author keywords

CF4; Dry etch; ICP; MoSiON; Profile; PSM; Surface morphology

Indexed keywords

ATTENUATION; MASKS; MOLYBDENUM COMPOUNDS; MORPHOLOGY; PHASE SHIFT; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SURFACES;

QUARTZ MORPHOLOGY;

INDUCTIVELY COUPLED PLASMA;

EID: 0036454480     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.476952     Document Type: Article

References (4)

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4. Sang Hoon Kim, Sang-Gyun Woo and Jinho Ahn "Effects of SF6 addition to O2 Plasma on Polyimide Etching"; Jpn. J. Appl. Phys. Vol. 39 pp. 7011-7014, 2000.