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Volumn 719, Issue , 2002, Pages 17-22

Microstructure and optical properties of GaN films grown on porous SiC substrate by MBE

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; POROUS MATERIALS; SILICON CARBIDE; THIN FILMS;

SKIN LAYERS;

GALLIUM NITRIDE;

EID: 0036452081 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-719-f1.3 Document Type: Conference Paper

Times cited : (4)

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- 3 cracking rate is exponeutially dependent on temperature.

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