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Volumn 3, Issue , 2002, Pages 1746-1751

Experimental measurement and simulation of thermal performance due to aging in power semiconductor devices

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; HEAT FLUX; POWER ELECTRONICS; SEMICONDUCTING SILICON; SOLDERING; THERMAL CONDUCTIVITY;

EID: 0036443069     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (17)

References (7)
  • 2
    • 0035151987 scopus 로고    scopus 로고
    • Void induced thermal impedance in power semiconductor modules: Some transient temperature effects
    • Industry Applications Conference, 2001
    • Katsis, D.C.; van Wyk, J.D. "Void Induced Thermal Impedance In Power Semiconductor Modules: Some Transient Temperature Effects" Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE, Vol. 3, 2001 pp. 1905-1911.
    • (2001) Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE , vol.3 , pp. 1905-1911
    • Katsis, D.C.1    Van Wyk, J.D.2
  • 7
    • 0011840131 scopus 로고    scopus 로고
    • Intersil Corporation Application Note, October, AN7244.3
    • "Understanding Power MOSFETs" Intersil Corporation Application Note, October 1999, AN7244.3.
    • (1999) Understanding Power MOSFETs


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.