Ultrafast intersubband transitions at λ ∼ 1.35-1.55 μm in GaN/AIGaN multiple quantum wells

Conference on Optical Fiber Communication, Technical Digest Series

Volumn 70, Issue , 2002, Pages 27-

  Gmachl, Claire ^a   Ng, Hock M ^a   Heber, Jörg D ^a   Baldwin, Kirk W ^a   Cho, Alfred Y ^a   Chu, S N George ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON ABSORPTION; ELECTRON TRANSITIONS; FERMI LEVEL; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SPECTRUM ANALYSIS;

INTERSUBBAND TRANSITIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036442675     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. N. Suzuki, Opt. And Quantum Electron. 33, 985-997 (2001).
3. C. Gmachl, H.M. Ng, S.-N.G. Chu, and A.Y. Cho, Appl. Phys. Lett 77, 3722-3724 (2000).
4. C. Gmachl, H.M. Ng, and A.Y. Cho, Appl. Phys. Lett. 79, 1590-1592 (2001).
5. C. Gmachl, S.V. Frolov, H.M. Ng, S.-N.G. Chu, and A.Y. Cho, Electron. Lett. 37, 378-380 (2001).