Silicon germanium BiCMOS technology

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2002, Pages 3-6

  Kempf, Paul ^a   Racanelli, Marco ^b  

^a CTO   (United States)

^b R and D   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CODE DIVISION MULTIPLE ACCESS; CURRENT DENSITY; LOCAL AREA NETWORKS; SEMICONDUCTING SILICON COMPOUNDS;

WIRELESS LOCAL AREA NETWORKS (WLAN);

CMOS INTEGRATED CIRCUITS;

EID: 0036440924     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M. Racanelli, et al., "Ultra High Speed SiGe NPN for Advanced BiCMOS Technology," IEDM (2001).
2. K. Schuegraf, et al., "0.18 um SiGe BiCMOS technology for wireless and 40 Gb/s communication products", BCTM (2001).
3. K.H. To, "Comprehensive Study of Substrate Noise Isolation for Mixed Signal Circuits," IEDM (2001).
4. P. Ye, et al., "High Performance Circuits in 0.18 um SiGe BiCMOS Process for Wireless Applications," RFIC Symposium (2002).