Influence of epitaxial layer on SiC Schottky diode gas sensors operated under high-temperature conditions

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1423-1426

  Nakagomi, Shinji ^a   Shinobu, Hiroaki ^a   Unés, Lars ^b   Lundström, Ingemar ^b   Ekedahl, Lars G ^b   Yakimova, Rositza ^b   Syväjärvi, Mikael ^b   Henry, Anne ^b   Janzén, Erik ^b   Spetz, Anita Lloyd ^b  

^a ISHINOMAKI SENSHU UNIVERSITY   (Japan)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Epitaxial layers; Gas sensors; High temperature; Resistance; Scattering; Schottky diodes

Indexed keywords

CHEMICAL SENSORS; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC RESISTANCE; EPITAXIAL LAYERS; GAS DETECTORS; GASES; GROWTH RATE; SCATTERING; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SUBLIMATION; TEMPERATURE DISTRIBUTION; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

DIFFERENT THICKNESS; HIGH TEMPERATURE; HIGH TEMPERATURE CONDITION; REVERSE-SATURATION CURRENTS; SCHOTTKY DIODE GAS SENSORS; SCHOTTKY DIODES; SUBLIMATION METHODS; TEMPERATURE DEPENDENCE; SATURATION CURRENT;

EPITAXIAL GROWTH; SCHOTTKY BARRIER DIODES;

EID: 0036434006     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1423     Document Type: Conference Paper

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