Sublimation growth of bulk AIN crystals: Materials compatibility and crystal quality

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1445-1448

  Epelbaum, B M ^a   Hofmann, D ^a   Bickermann, M ^a   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

AIN single crystal; AIN SiC mixed crystals; Bulk growth; Crucible material; Sublimation growth

Indexed keywords

SILICON CARBIDE; SINGLE CRYSTALS; TUNGSTEN; ALUMINUM NITRIDE; CRYSTAL GROWTH; GRAPHITE; SUBLIMATION;

BEST CHOICE; BULK GROWTH; CRUCIBLE MATERIALS; CRYSTAL QUALITIES; FLEXIBLE DESIGNS; HIGH TEMPERATURE; MIXED CRYSTALS; SUBLIMATION GROWTH; CRYSTAL QUALITY;

SUBLIMATION; SINGLE CRYSTALS;

EID: 0036429719     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1445     Document Type: Conference Paper

References (6)

1. G.A. Slack and T.F. McNelly, J. of Crystal Growth 34 (1976), 263
2. CM. Balkas, Z. Sitar, T. Zheleva, L. Bergmann, R. Nemanich, R.F. Davis, J. of Crystal Growth 179(1997), 363
3. P.M. Mason, H. Przybylinska, G.D. Watkins, W.J. Choyke, G.A. Slack, Phys. Rev. B 59 (1999), 1937
4. R.B. Campbell and H.C. Chang, in Solid Stale Ultrasonic Devices for Fire Detection and Advanced Flight Vehicles (National Technical Information Services Clearinghouse, Springfield, VA, 1967)
5. Y. Shi, B. Liu, L. Liu, J.H. Edgar, E.A. Payzant, J.M. Hayes, M.Kuball, MRS Internet J. Nitride Semicond. Res. 6 (2001), 5
6. A.S. Segal, S.Yu. Karpov. Yu. N. Makarov, E.N. Mokhov, A.D. Roenkov, M.G. Ramin, Yu. A. Vodakov, J. of Crystal Growth 211 (2000), 68