Brilliant photoluminescence from GaN film grown by PLD under particle-energy-manipulation

Applied Surface Science

Volumn 197, Issue 198, 2002, Pages 490-493

  Mizuno, K ^a   Masuyama, Y ^a   Kiso, M ^a   Suzuki, J ^a   Kobayashi, T ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

GaN; Molten Ga target; N2; Nitrogen radical beam source; Photoluminescence; PLD

Indexed keywords

EXCIMER LASERS; GALLIUM NITRIDE; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; THERMAL PLUMES;

BAND EDGE EMISSIONS;

SURFACE PROPERTIES;

EID: 0036428370     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00377-X     Document Type: Article

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