Effect of quartz phase etch on 193 nm alternating phase shift mask performance for the 100 nm node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691 II, Issue , 2002, Pages 1033-1040

  Patterson, Kyle ^a   Litt, Lloyd C ^a   Maltabes, John G ^a   Hughes, Greg P ^b   Robertson, Trish ^a   Montgomery, Brian ^a  

^a MOTOROLA INC   (United States)

^b Dupont Reticle Technology Center   (United States)

Author keywords

100 nm node; 193 nm; Lithography; Phase shift

Indexed keywords

ABERRATIONS; COSTS; DATA ACQUISITION; ETCHING; LENSES; MASKS; OPTICAL RESOLVING POWER; QUARTZ;

ALTERNATING APERTURE PHASE SHIFT MASK (AAPSM);

PHASE SHIFT;

EID: 0036416640     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474481     Document Type: Article

References (4)

1. M.D. Levenson, N. Viswanathan, and R. Simpson, "Improving Resolution in Photolithography with a Phase-Shifting Mask," IEEE Trans. Electron Devices 1982, ED-29, 1828-1836.
2. L.W. Liebmann, T.H. Newman, R.A. Ferguson, R.M. Martino, A.F. Molless, M.O. Neisser, and J.T. Weed, "A Comprehensive Evaluation of Major Phase Shift Mask Technologies for Isolated Gate Structures in Logic Designs," Proc. Soc. Photo-Opt. Instrum. Eng. 1994, 2197, 612-623.
3. T. Brunner, A. Martin, R. Martino, C. Ausschnitt, T. Newman, and M. Hibbs, "Quantitative Stepper Metrology Using the Focus Monitor Test Mask," Proc. Soc. Photo-Opt. Instrum. Eng 1994, 2197, 541-549.
4. R. Mih, A. Martin, T. Brunner, D. Long, and D. Brown, "Using the Focus Monitor Test Mask to Characterize Lithographic Performance," Proc. Soc. Photo-Opt. Instrum. Eng. 1995, 2440, 657-666.