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Volumn 4691 I, Issue , 2002, Pages 227-239

CD vs. pitch across the slit for multiple 248 nm step & scan exposure tools

Author keywords

High NA; Optical Proximity Effects; Tool to tool matching

Indexed keywords

ABERRATIONS; COMPUTER SIMULATION; IMAGE ANALYSIS; LIGHT INTERFERENCE; SCANNING ELECTRON MICROSCOPY;

EID: 0036416505     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.474571     Document Type: Conference Paper
Times cited : (2)

References (4)
  • 1
    • 0011184381 scopus 로고    scopus 로고
    • Optimization methodology towards a manufacturable 0.3 μm poly-gate process using I-line lithography
    • Jo Finders et al., "Optimization methodology towards a manufacturable 0.3 μm poly-gate process using I-line lithography, Olin Interface Lithography conference 1996, p. 223.
    • (1996) Olin Interface Lithography conference 1996 , pp. 223
    • Finders, J.1
  • 3
    • 0011237709 scopus 로고    scopus 로고
    • Reticle process induced proximity effects
    • 14-16/1, Munich, Germany
    • M. Janssen et al., Reticle Process Induced Proximity Effects, European Mask Conference, 14-16/1/2002, Munich, Germany.
    • (2002) European Mask Conference
    • Janssen, M.1
  • 4
    • 0003196096 scopus 로고    scopus 로고
    • Demonstrating next-generation CD uniformity with today's tools and processes
    • Jacques Waelpoel
    • Jacques Waelpoel et al., "Demonstrating next-generation CD uniformity with today's tools and processes", SPIE Vol. 3236, 1998 Jacques Waelpoel.
    • (1998) SPIE , vol.3236
    • Waelpoel, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.