CD vs. pitch across the slit for multiple 248 nm step & scan exposure tools

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691 I, Issue , 2002, Pages 227-239

  Finders, Jo ^a   De Kruif, Robert ^a   Bruls, Richard ^a   Bouchoms, Igor ^a  

^a ASML   (Netherlands)

Author keywords

High NA; Optical Proximity Effects; Tool to tool matching

Indexed keywords

ABERRATIONS; COMPUTER SIMULATION; IMAGE ANALYSIS; LIGHT INTERFERENCE; SCANNING ELECTRON MICROSCOPY;

OPTICAL PROXIMITY CORRECTION (OPC);

PHOTOLITHOGRAPHY;

EID: 0036416505     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.474571     Document Type: Conference Paper

References (4)

1. Jo Finders et al., "Optimization methodology towards a manufacturable 0.3 μm poly-gate process using I-line lithography, Olin Interface Lithography conference 1996, p. 223.
2. Geert Vandenberghe et al.," 248-nm lithography for the 0.18 μm generation", Olin Interface Lithography conference 1996, p. 29.
3. M. Janssen et al., Reticle Process Induced Proximity Effects, European Mask Conference, 14-16/1/2002, Munich, Germany.
4. Jacques Waelpoel et al., "Demonstrating next-generation CD uniformity with today's tools and processes", SPIE Vol. 3236, 1998 Jacques Waelpoel.