Electrical properties of CuIn3Se5 bulk crystal at low temperature

Crystal Research and Technology

Volumn 37, Issue 10, 2002, Pages 1088-1093

  Hernandez E ^a   Lopez Pescador A ^b   Durante Rincon C A ^a   Leon M ^b  

^a FACULTAD DE CIENCIAS VETERINARIAS   (Venezuela)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

CuIn3Se5; Electrical properties; OVC; Ternary semiconductor

Indexed keywords

COMPOSITION; CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY DISPERSIVE SPECTROSCOPY; FLUORESCENCE; HALL EFFECT; HIGH TEMPERATURE OPERATIONS; LIGHT SCATTERING; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; X RAY POWDER DIFFRACTION;

COPPER INDIUM SELENIDE; IONIZED IMPURITY SCATTERING MECHANISM; POLAR OPTICAL SCATTERING; TERNARY SEMICONDUCTORS; TOTAL X RAY FLUORESCENCE;

COPPER COMPOUNDS;

EID: 0036408188     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200210)37:10<1088::AID-CRAT1088>3.0.CO;2-D     Document Type: Article

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