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Volumn 4637, Issue , 2002, Pages 75-81

Laser induced diffusible resistance: Device characterization and process modeling

Author keywords

Laser trimming; Microelectronics; Resistance

Indexed keywords

CARRIER MOBILITY; CHARACTERIZATION; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; MATHEMATICAL MODELS; MICROELECTRONIC PROCESSING; PROCESS CONTROL; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

EID: 0036405184     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.470672     Document Type: Conference Paper
Times cited : (2)

References (15)
  • 5
    • 0011127078 scopus 로고    scopus 로고
    • ISE TCAD 7.0, AG, Switzerland
    • ISE TCAD 7.0, ISE Integrated Systems Engineering, AG, Switzerland, www.ise.com.
  • 6
    • 0020783138 scopus 로고
    • Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus- and boron-doped silicon
    • G. Masetti, M. Severi, and S. Solmi, "Modeling of Carrier Mobility Against Carrier Concentration in Arsenic-, Phosphorus- and Boron-Doped Silicon", IEEE Trans.Electron Devices, ED-30, 764-769 (1983).
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 764-769
    • Masetti, G.1    Severi, M.2    Solmi, S.3
  • 7
    • 0016576617 scopus 로고
    • Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature
    • C. Canali, G. Majni, R. Minder, and G. Ottaviani, "Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature", IEEE Trans. ED, pp. 1045-1047 (1975).
    • (1975) IEEE Trans. ED , pp. 1045-1047
    • Canali, C.1    Majni, G.2    Minder, R.3    Ottaviani, G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.