Modeling of bombardment-induced diffusion and segregation during the self-sputtering of Ga+ ions at SiO2/Si interfaces

Surface and Coatings Technology

Volumn 158-159, Issue , 2002, Pages 281-287

  Ignatova, V ^a   Chakarov, I ^b  

^a INSTITUTE OF ELECTRONICS   (Bulgaria)

^b Silvaco Data Systems Inc   (United States)

Author keywords

Computer simulation of diffusion; Ion solid interaction; Segregation; Sputtering

Indexed keywords

BALLISTICS; COMPUTER SIMULATION; GALLIUM; SILICA; SPUTTERING;

RADIATION ENHANCED DIFFUSION;

SURFACE CHEMISTRY;

ION BOMBARDMENT;

EID: 0036396129     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(02)00184-6     Document Type: Article

References (22)

1. Analytical characterization of new high-k dielectric stacks
2. Segregation of gallium at Si02/Si interfaces during sputtering with Ga+ ions: Experimental and computer simulation study