A new application for heteropolyanions: Etching of III-V semiconductor compounds

Journal of Cluster Science

Volumn 13, Issue 3, 2002, Pages 313-331

  Quennoy, Anne ^a   Rothschild, Aude ^a   Geérard, Isabelle ^a   Etcheberry, Arnaud ^a   Debiemme Chouvy, Catherine ^a  

^a UNIVERSITÉ DE VERSAILLES SAINT QUENTIN EN YVELINES   (France)

Author keywords

Etching; GaAs; Heteropolyanion; InP; Photoetching; Polyoxometalate; XPS

Indexed keywords

GALLIUM; INDIUM; POLYANION; SILICON DERIVATIVE;

ACIDITY; AQUEOUS SOLUTION; CONFERENCE PAPER; DISSOLUTION; ENERGY; FILM; ILLUMINATION; OXIDATION REDUCTION REACTION; SEMICONDUCTOR; SURFACE PROPERTY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0036395262     PISSN: 10407278     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1020594831098     Document Type: Article

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