The influence of hydrogen and nitrogen on the floating zone growth of ultra-pure silicon crystals

CPEM Digest (Conference on Precision Electromagnetic Measurements)

Volumn , Issue , 2002, Pages 564-565

  Becker, P ^a   Bettin, H ^a   Kuetgens, U ^a   Basile, G ^b   Riemann, H ^c   Ammon, W V ^d   Goerigk, G ^e  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b Istituto di Metrologia   (Italy)

^c Institut für Mathematik Institut für Physik IRIS Adlershof   (Germany)

^d SILTRONIC AG   (Germany)

^e FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL GROWTH FROM MELT; DENSITY (SPECIFIC GRAVITY); HYDROGEN; LATTICE CONSTANTS; NITROGEN; SINGLE CRYSTALS; SOLUBILITY;

AVOGADRO CONSTANT; FLOATING ZONE GROWTH; ULTRA-PURE SILICON CRYSTALS;

SEMICONDUCTING SILICON;

EID: 0036393673     PISSN: 05891485     EISSN: None     Source Type: Journal    
DOI: 10.1109/CPEM.2002.1034972     Document Type: Article

References (13)

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