Fabrication of Mo/Si multilayer for EUVL reticle blank by ion beam sputtering

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4688, Issue 2, 2002, Pages 710-715

  Yamanashi, Hiromasa ^a   Ogawa, Taro ^a   Hoko, Hiromasa ^a   Lee, Byoung Taek ^a   Hoshino, Eiichi ^a   Takahashi, Masashi ^a   Yoneda, Takashi ^a   Okazaki, Shinji ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Defect; EUV lithography; Ion beam sputtering (IBS); Mask; Molybdenum silicon (Mo Si); Multilayer; Reflectivity; Reticle

Indexed keywords

COMPUTER SIMULATION; MAGNETRON SPUTTERING; MASKS; MOLYBDENUM; MULTILAYERS; OPTICAL COATINGS; SILICON; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL);

PHOTOGRAPHY;

EID: 0036381477     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.472345     Document Type: Conference Paper

References (2)

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2. T. Hosokawa et al: Rev. Sci. Instrum., Vol. 60, No. 7, p. 1783 (1989)