SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 671-676

High efficiency UV-emission at 345 nm from InAlGaN light-emitting diodes

(6) Kinoshita, A a Hirayama, H a Ainoya, M a Yamabi, T a Hirata, A a Aoyagi, Y a

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; SEMICONDUCTOR LASERS; SEMICONDUCTOR SUPERLATTICES; ULTRAVIOLET RADIATION;

INDIUM ALUMINUM GALLIUM NITRIDE; ULTRAVIOLET EMISSION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0036374127 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (2)

References (15)

1
- 0003453296
- (Springer, Berlin)
- (1997) The Blue Laser Diode
- Nakamura, S.¹ Fasol, G.²

2
- 21544445581
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1688
- Han, J.¹ Crawford, M.H.² Shul, R.J.³ Figiel, J.J.⁴ Banas, M.⁵ Zhang, L.⁶ Song, Y.K.⁷ Zhou, H.⁸ Nurmikko, A.V.⁹

3
- 0039782265
- (2001) Appl. Phys. Lett. , vol.79 , pp. 711
- Nishida, T.¹ Saito, H.² Kobayashi, N.³

4
- 0004337813
- (to be published)
- Phys. Satus Solidi A
- Iwaya, M.¹ Terao, S.² Sano, T.³ Takanami, S.⁴ Ukai, T.⁵ Kamiyama, S.⁶ Amano, H.⁷ Akasaki, I.⁸

5
- 0000224881
- (2000) Appl. Phys. Lett. , vol.77 , pp. 175
- Kinoshita, A.¹ Hirayama, H.² Ainoya, M.³ Hirata, A.⁴ Aoyagi, Y.⁵

6
- 0035885666
- (2001) Jpn. J. Appl. Phys. , vol.40 , pp. L921
- Zhang, J.P.¹ Adivarahan, V.² Wang, H.M.³ Fareed, Q.⁴ Kuokstis, E.⁵ Chitnis, A.⁶ Shatalov, M.⁷ Yang, J.W.⁸ Simin, G.⁹ Khan, M.A.¹⁰ Shur, M.¹¹ Gaska, R.¹²

7
- 79956040037
- (2002) Appl. Phys. Lett. , vol.80 , pp. 207
- Hirayama, H.¹ Kinoshita, A.² Yamabi, T.³ Enomoto, Y.⁴ Hirata, A.⁵ Araki, T.⁶ Nanishi, Y.⁷ Aoyagi, Y.⁸

8
- 0002746570
- (1998) Appl. Phys. Lett. , vol.73 , pp. 496
- Chichibu, S.¹ Cohen, D.A.² Mack, M.P.³ Abare, A.C.⁴ Kozodoy, P.⁵ Minsky, M.⁶ Fleischer, S.⁷ Keller, S.⁸ Bowers, J.E.⁹ Mishra, U.K.¹⁰ Coldren, L.A.¹¹ Clarke, D.R.¹² DemBaars, S.P.¹³

9
- 0344975184
- (1997) Appl. Phys. Lett. , vol.70 , pp. 981
- Narukawa, Y.¹ Kawakami, Y.² Funato, M.³ Fujita, S.⁴ Fujita, S.⁵ Nakamura, S.⁶

10
- 0000616804
- (1999) Appl. Phys. Lett. , vol.75 , pp. 2444
- Kozodoy, P.¹ Smorchkova, Y.P.² Hansen, M.³ Xing, H.⁴ DeBaars, S.P.⁵ Mishra, U.K.⁶ Saxler, A.W.⁷ Perrin, R.⁸ Mitchel, W.C.⁹

11
- 0033321785
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. L1012
- Kumakura, K.¹ Kobayashi, N.²

12
- 3242748242
- (2000) MRS Internet J. Nitride Semicond. Res. , vol.5S1 , pp. W1135
- Hirayama, H.¹ Enomoto, Y.² Kinoshita, A.³ Hirata, A.⁴ Aoyagi, Y.⁵

13
- 85010709937
- (2000) Int. Workshop on Nitride Semicond. Nagoya , vol.TA4-5
- Iwai, S.¹ Kinoshita, A.² Hirayama, H.³ Aoyagi, Y.⁴

14
- 85010709954
- (2000) Mat. Res. Soc. Fall Meeting
- Kinoshita, A.¹ Hirayama, H.² Ainoya, M.³ Yamabi, T.⁴ Hirata, A.⁵ Aoyagi, Y.⁶

15
- 0003613942
- (2001) Mat. Res. Soc. Fall Meeting
- Yamabi, T.¹ Kinoshita, A.² Hirayama, H.³ Ainoya, M.⁴ Hirata, A.⁵ Araki, T.⁶ Nanishi, Y.⁷ Aoyagi, Y.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.