Observation of a new photoluminescence band at 320 nm under 270 nm excitation in Ge-doped silica glass

Journal of Non-Crystalline Solids

Volumn 311, Issue 1, 2002, Pages 83-88

  Garapon, J ^a   Poumellec, B ^a   Vacher, S ^a   Trukhin, A N ^b  

^a UNIVERSITÉ PARIS SUD   (France)

^b UNIVERSITY OF LATVIA   (Latvia)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COOLING; ELECTRON TRANSITIONS; GLASS TRANSITION; LIGHT ABSORPTION; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

ABSORPTION BANDS;

FUSED SILICA;

EID: 0036354381     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(02)01322-4     Document Type: Article

References (12)

1. Electron processes and defect structure in glassy systems