Electrical Properties of Boron and Phosphorus Doped Polycrystalline Silicon Germanium Films

International Journal of Nonlinear Sciences and Numerical Simulation

Volumn 3, Issue 3-4, 2002, Pages 677-680

  Dong, Liang ^a   Yue, Rui Feng ^a   Yan, Wang ^a   Huang, Wen Tao ^a   Liu, Li Tian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Effective carrier concentration; Hall mobility; Poly Si1 xGex; Resistivity

Indexed keywords

EID: 0036328087     PISSN: 15651339     EISSN: None     Source Type: Journal    
DOI: 10.1515/IJNSNS.2002.3.3-4.677     Document Type: Article

References (8)

1. King, T.J and Saraswat, K.C. A low-temperature (≤ 550°C) silicon germanium thin-film transistor technology for large-area electronics, Int.Electron Devices Meet. Techn. Dig., (1991)567-570
2. x gate CMOS technology, Int.Electron Devices Meet. Techn. Dig., (1990)253-256
3. King, T.J, James, P.M, Krishma, C.S. Electrical properties of heavily doped polycrystalline silicon-germanium films, IEEE Trans. Electron Devices, 41(2) (1994)228-232
4. x after dopant implantation, IEEE Trans, on Electron Devices, 44(11) (1997)1958-1964
5. Labusch, R and Lueducke, J. Grain boundary states in germanium, Philo. Mag. B, 64(4) (1991)463-468
6. Herzer, H and Kalbitze, S. Ion Implantation in Semiconductors, Springer-Verlag, 1971
7. Kamins, T. Polycrystalline Silicon for Intergated Circuit Applications, Kluwer, 1988
8. + polysilicon gated PMOS devices, IEEE Trans. Electron Devices, 37(1990)1842-1851