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Volumn 163, Issue 1, 2002, Pages 178-185

On the system silicon-ytterbium: Constitution, crystal chemistry, and physical properties

(10) Grytsiv, A a Kaczorowski, D b Leithe Jasper, A a Tran, V H b Pikul, A b Rogl, P a Potel, M c Noel H c Bohn, M d Velikanova, T e

a UNIVERSITY OF VIENNA (Austria)

b INSTITUTE OF LOW TEMPERATURE AND STRUCTURE RESEARCH (Poland)

c Laboratoire de Chimie du Solide et Inorganique Moleculaire de Rennes (France)

d IFREMER (France)

e FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE (Ukraine)

Author keywords

High temperature modification of YbSi2 x with AlB2 derivative type; Low temperature modification of Yb3Si5 with Th3Pd5 type; Phase diagram of Si Yb (> 60 at. Si)

Indexed keywords

ALLOY; GALLIUM; INDIUM; PALLADIUM COMPLEX; SILICON; THORIUM DERIVATIVE; YTTERBIUM;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL REACTION; COOLING; CRYSTAL; ELECTRIC RESISTANCE; HIGH TEMPERATURE; LOW TEMPERATURE; MAGNETISM; MATERIALS; MATERIALS TESTING; X RAY DIFFRACTION;

EID: 0036324798 PISSN: 00224596 EISSN: None Source Type: Journal
DOI: 10.1006/jssc.2001.9390 Document Type: Article

Times cited : (25)

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