A 2.6 V GSM/PCN dual band variable gain low noise RF down conversion mixer

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2002, Pages 137-140

  Kim, Bonkee ^a   Nah, Kyung Suc ^a   Alan, Tae Won ^a   Lee, Han Il ^a   Cho, Je Kwang ^a   Park, Byeong Ha ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; ELECTRIC POWER UTILIZATION; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; POWER AMPLIFIERS; SPURIOUS SIGNAL NOISE;

LOW NOISE AMPLIFIERS (LNA);

MIXER CIRCUITS;

EID: 0036316876     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. A CMOS RF-receiver front-end for 1 GHz applications
2. Design of high performances Gilbert-cell mixers for GSM/DCS front-ends
3. A new design approach for variable-gain low noise amplifiers
4. Dual-band high-linearity variable-gain low-noise amplifiers for wireless applications