Novel model of electrical conduction property at grain boundary in polysilicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 1, 2002, Pages 185-189

  Meng, Fanying ^a   Cui, Rongqiang ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Electrical property; Gaussian distribution; Grain boundary; Polysilicon

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE;

GAUSSIAN DISTRIBUTION;

POLYSILICON;

EID: 0036309722     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.185     Document Type: Article

References (15)