38 GHz low-power static frequency divider in SiGe bipolar technology

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn 4, Issue , 2002, Pages 413-416

  Ritzberger, Günter ^a,b   Böck, Josef ^a   Knapp, Herbert ^a   Treitinger, Ludwig ^a   Scholtz, Arpad L ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; ELECTRIC POWER SUPPLIES TO APPARATUS; FREQUENCY SYNTHESIZERS; INTEGRATED CIRCUIT LAYOUT; OPTIMIZATION; PHASE LOCKED LOOPS; SEMICONDUCTING SILICON COMPOUNDS; VARIABLE FREQUENCY OSCILLATORS;

DIVISION RATIOS; LOW POWER STATIC FREQUENCY DIVIDER; PHASE LOCKED LOOP SYNTHESIZER;

FREQUENCY DIVIDING CIRCUITS;

EID: 0036291005     PISSN: 02714310     EISSN: None     Source Type: Journal    
DOI: 10.1109/ISCAS.2002.1010479     Document Type: Article

References (6)

1. A low power 72.8 GHz static frequency divider implemented in AlInAs/InGaAs HBT IC technology
2. 5.3-ps ECL and 71-GHz static frequency divider in self-aligned SEG SiGe HBT
3. 25 GHz static frequency divider and 25 Gb/s multiplexer in 0.12 μm CMOS
4. SiGe bipolar technology for mixed digital and analogue RF applications
5. A 12 GHz/128 frequency divider in 0.25 μm CMOS
6. A 23 GHz static 1/128 frequency divider implemented in a manufacturable Si/SiGe HBT process