Temperature sensor applications of diode-connected MOS transistors

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn 2, Issue , 2002, Pages

  Filanovsky, I M ^a   Lim, Su Tarn ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

Device characterization; Mobility; MOSFET; Temperature effects; Temperature sensors; Threshold voltage

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR DIODES; SENSORS; TEMPERATURE MEASURING INSTRUMENTS; THERMAL EFFECTS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

GATE SOURCE VOLTAGE; SUBMICRON TECHNOLOGY; TEMPERATURE SENSOR; ZERO TEMPERATURE COEFFICIENT;

MOSFET DEVICES;

EID: 0036287194     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Mutual compensation of mobility and threshold voltage temperature effects with application in CMOS circuits
2. Temperature-independent output voltage generated by the threshold voltage of NMOS transistor
3. Temperature dependence of output voltage generated by interaction of threshold voltage and mobility of NMOS transistor
4. Source-coupled differential pair offset voltage drift