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Volumn 17, Issue 1, 2002, Pages 75-82

Negative transverse magnetoresistance of boron-doped graphite at liquid-nitrogen temperature in relation to 3D weak localization

(5) Hishiyama, Y a Matustani, T a Suzuki, M a Kaburagi, Y a Sugihara, K b

a TOKYO CITY UNIVERSITY (Japan)

b NIHON UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CHARGE CARRIERS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; FERMI LEVEL; HALL EFFECT; LOW TEMPERATURE EFFECTS; MAGNETORESISTANCE; MATHEMATICAL MODELS;

NEGATIVE TRANSVERSE MAGNETORESISTANCE;

GRAPHITE;

EID: 0036258986 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.2002.0013 Document Type: Article

Times cited : (4)

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