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Volumn 127, Issue 1-2, 2002, Pages 63-79

Mid-gap state formed inside Mott gap of 1T-TaS2 single crystals and metal-insulator transition

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HALL EFFECT; MAGNETIZATION; METAL INSULATOR TRANSITION; THERMOELECTRICITY;

EID: 0036249785     PISSN: 00222291     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1014749121869     Document Type: Article
Times cited : (10)

References (34)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.