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Volumn 127, Issue 1-2, 2002, Pages 63-79
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Mid-gap state formed inside Mott gap of 1T-TaS2 single crystals and metal-insulator transition
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL GROWTH;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY;
HALL EFFECT;
MAGNETIZATION;
METAL INSULATOR TRANSITION;
THERMOELECTRICITY;
MOTT GAP;
SINGLE CRYSTALS;
LOW TEMPERATURE;
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EID: 0036249785
PISSN: 00222291
EISSN: None
Source Type: Journal
DOI: 10.1023/A:1014749121869 Document Type: Article |
Times cited : (10)
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References (34)
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