Erratum: Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator: The role of remote phonon scattering (Journal of Applied Physics (2001) 90 (4587))

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 546-

  Fischetti, Massimo V ^a   Neumayer, Deborah A ^a   Cartier, Eduard A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036139273     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1427643     Document Type: Erratum

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