Characterization of crosstalk between CMOS photodiodes

Solid-State Electronics

Volumn 46, Issue 1, 2002, Pages 53-59

  Brouk, I ^a   Nemirovsky, Y ^a   Lachowicz, S ^b   Gluszak, E A ^b   Hinckley, S ^b   Eshraghian, K ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b EDITH COWAN UNIVERSITY   (Australia)

Author keywords

CMOS photodiodes; Crosstalk; Photodiode image sensors; Quantum efficiency

Indexed keywords

CMOS INTEGRATED CIRCUITS; CROSSTALK; IMAGE SENSORS; QUANTUM EFFICIENCY; SEMICONDUCTOR JUNCTIONS;

ACTIVE PIXEL SENSORS (APS);

PHOTODIODES;

EID: 0036132405     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00268-4     Document Type: Article

References (15)

1. Dimensional effects in CMOS photodiodes
2. Characterization of CMOS photodiodes for imager application
3. Application specific spectral response with CMOS compatible photodiodes
4. Collection efficiency and crosstalk in closely spaced photodiode arrays
5. Photosensing arrays with improved spatial resolution
6. Crosstalk measurements on a linear array of deep U-groove isolated silicon photodiodes
7. Photoelectric crosstalk between silicon photo-elements
8. Self-consistent model of minority-carrier lifetime, diffusion length, and mobility
9. Lifetime in p-type silicon
10. Calculated majority- and minority-carrier mobilities in heavily doped silicon and comparisons with experiment