Transient thermal simulations of a three-dimensional unit cell in power control systems and high-power microwave devices

Solid-State Electronics

Volumn 46, Issue 1, 2002, Pages 123-131

  Buot, F A ^a   Mittereder, J A ^a   Anderson, W T ^a   Ioannou, D E ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b GEORGE MASON UNIVERSITY   (United States)

Author keywords

3 D thermal transient simulation; Atomic force microscopy (AFM); High power microwave devices; IGBT; Short circuit; SiC and GaN power control devices; SiC MMIC

Indexed keywords

ATOMIC FORCE MICROSCOPY; CALIBRATION; COMPUTER SIMULATION; DESIGN; INSULATED GATE BIPOLAR TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTIMIZATION; POWER CONTROL;

TRANSIENT THERMAL SIMULATIONS;

MICROWAVE DEVICES;

EID: 0036132380     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00204-0     Document Type: Article

References (12)

1. Electrothermal modeling of IGBTs: Application to short-circuit conditions
2. A study on short circuit destruction of IGBTs
3. New cell designs for improved IGBT safe-operating area
4. A novel method for quantitatively measuring the channel temperature of GaAs devices for reliability lifetime prediction
5. Numerical simulation of hot-electron effects on source-drain burnout characteristics of GaAs power FETs
6. Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors
7. Thermal characterization of silicon carbide MESFET MMICs
8. Carbon nanotubes as probes for atomic force microscopy