Crystal growth of HgZnTe alloy by directional solidification in low gravity environment

Journal of Crystal Growth

Volumn 234, Issue 2-3, 2002, Pages 487-497

  Su, Ching Hua ^a   Sha, Yi Gao ^a   Lehoczky, S L ^a   Szofran, F R ^a   Gillies, D C ^a   Scripa, R N ^b   Cobb, S D ^a   Wang, J C ^c  

^a NASA MARSHALL SPACE FLIGHT CENTER   (United States)

^b UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

^c ALABAMA A AND M UNIVERSITY   (United States)

Author keywords

A1. Characterization; A1. Defects; A1. Dendrites; A1. Directional solidification; A1. Solid solutions; A2. Bridgman technique; A2. Growth from melt; A2. Microgravity conditions; B1. Zinc compounds; B2. Semiconducting II VI materials; B2. Semiconducting mercury compounds

Indexed keywords

GRAVITATIONAL EFFECTS; MERCURY COMPOUNDS; QUENCHING; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS; SOLIDIFICATION;

SEMICONDUCTING MERCURY COMPOUNDS;

CRYSTAL GROWTH;

EID: 0036131658     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01735-3     Document Type: Article

References (11)

1. Numerical formulation of compositional segregation at curved solid-liquid interface during steady state solidification process