Catalytic effect of Ni for activation of Mg-doped GaN in N2 and N2O

Journal of Crystal Growth

Volumn 234, Issue 2-3, 2002, Pages 459-462

  Waki, I ^a   Fujioka, H ^a   Oshima, M ^a   Miki, H ^b   Okuyama, M ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b Showa Denko Materials Co   (Japan)

Author keywords

A1. Doping; A1. Surface structure; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ANNEALING; CATALYST ACTIVITY; DESORPTION; FILM GROWTH; GALLIUM NITRIDE; HOLE MOBILITY; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SURFACE STRUCTURE;

CATALYTIC EFFECTS;

CRYSTAL GROWTH;

EID: 0036131508     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01704-3     Document Type: Article

References (16)