Correlation of surface morphologies with Mn compositions of Ga1-xMnxAs epilayers grown by liquid phase epitaxy

Materials Letters

Volumn 52, Issue 1-2, 2002, Pages 39-42

  Kim, Hwa Mok ^a   Leem, Jae Hyeon ^a   Kang, Tae Won ^a  

^a Dongguk University   (South Korea)

Author keywords

As grown; Atomic forced microscopy (AFM); Energy dispersive X ray analysis (EDS); Ga1 xMnxAs; LPE; Mn composition; Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; LIQUID PHASE EPITAXY; MANGANESE; MORPHOLOGY; SEMICONDUCTOR GROWTH; SURFACES;

EPILAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036131381     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(01)00362-7     Document Type: Article

References (8)