Anisotropy of the piezojunction effect in silicon transistors

Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2002, Pages 316-319

  Creemer, J F ^a   French, P J ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRIC CURRENTS; INTEGRATED CIRCUIT LAYOUT; MICROELECTROMECHANICAL DEVICES; PIEZOELECTRICITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SENSORS; STRESSES;

MATERIAL PARAMETER; PIEZOJUNCTION EFFECT; POLYNOMIAL TENSOR; REDUCED INDEX NOTATION; SATURATION CURRENT; SILICON TRANSISTORS; STRESS ORIENTATION; STRESS SENSITIVITY;

BIPOLAR TRANSISTORS;

EID: 0036120760     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. A new uniaxial accelerometer in silicon based on the piezojunction effect
2. A monolithically-integrated transistor microphone: Modelling and theoretical behaviour
3. A graphical representation of the piezoresistance coefficients in silicon
4. An analytical model of the piezojunction effect for arbitrary stress and current orientations
5. A new model of the effect of mechanical stress on the saturation current of bipolar transistors
6. Piezoresistive stress sensors for structural analysis of electronic packages
7. Nonlinear piezoresistive coefficients in silicon
8. A new sensor structure using the piezojunction effect in PNP lateral structures