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Crystal Research and Technology

Volumn 37, Issue 4, 2002, Pages 407-413

Experimental study of interface inversion of Tb3ScxAl5-xO12 single crystals grown by the Czochralski method

(4) Galazka, Z a Ganschow, S b Reiche, P b Uecker, R b

a ukasiewicz Research Network Institute of Microelectronics and Photonics (Poland)

b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

Author keywords

Crystal growth; Czochralski method; Interface inversion; Tb3ScxAl5 xO12

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL ORIENTATION; INTERFACES (MATERIALS); TERBIUM COMPOUNDS; THERMAL GRADIENTS;

CRYSTAL ROTATION; INTERFACE TRANSITION; MELTING POINT; TERBIUM SCANDIUM ALUMINUM OXIDES;

SINGLE CRYSTALS;

EID: 0036096344 PISSN: 02321300 EISSN: None Source Type: Journal
DOI: 10.1002/1521-4079(200204)37:4<407::AID-CRAT407>3.0.CO;2-5 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.