Effects of hot-carrier stress on the RF performance of 0.18 μm technology NMOSFETs and circuits

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 98-104

  Naseh, Sasan ^a   Deen, M Jamal ^a   Marinov, Ognian ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

Hot carriers; Low noise amplifier; NMOSFET; RF CMOS

Indexed keywords

CAPACITORS; CIRCUIT THEORY; DEGRADATION; GATES (TRANSISTOR); HOT CARRIERS; STABILITY; STRESS ANALYSIS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

HOT-CARRIER STRESS;

MOSFET DEVICES;

EID: 0036082052     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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