High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2002, Pages 513-516

  Huo, Xiao ^a   Chen, Kevin J ^a   Chan, Philip C H ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC INDUCTORS; ELECTROPLATING; INTERFACES (COMPUTER); OHMIC CONTACTS; PERMITTIVITY; PHOTORESISTS;

BENZOCYCLOBUTENE; COPPER INDUCTORS; DIELECTRIC LAYER;

CMOS INTEGRATED CIRCUITS;

EID: 0036073649     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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7. A high Q on-chip Cu inductor post process for Si integrated circuits
8. Copper drift in low-k polymer dielectrics for ULSI metallization
9. High-Q integrated spiral inductors for high performance wireless front-end systems
10. Physical modeling of spiral inductors on silicon
11. On-chip spiral inductors with patterned ground shields for Si-based RF IC's