Growth of Bi4Ge3O12 single crystal by the micro-pulling-down method from bismuth rich composition

Journal of Crystal Growth

Volumn 243, Issue 1, 2002, Pages 157-163

  Shim, J B ^a   Lee, J H ^a   Yoshikawa, A ^a   Nikl, M ^b   Yoon, D H ^c   Fukuda, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c Sungkyunkwan University   (South Korea)

Author keywords

A1. Rich composition; A2. Micro pulling down method; B1. Bismuth germanate

Indexed keywords

BISMUTH COMPOUNDS; COMPOSITION; ELECTRIC RESISTANCE; IONS; PHOSPHORS; SINGLE CRYSTALS; VAPORIZATION;

MICRO-PULLING-DOWN METHODS;

CRYSTAL GROWTH;

EID: 0036071997     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01477-X     Document Type: Article

References (12)