Some properties of carbon-doped GaAs using carbon tetrabromide in solid-source molecular beam epitaxy

Journal of Crystal Growth

Volumn 243, Issue 1, 2002, Pages 41-46

  Zhang, R ^a   Yoon, S F ^a   Tan, K H ^a   Sun, Z Z ^a   Huang, Q F ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

A1. Characterization; A1. Doping; A3. Molecular beam epitaxy; B1. Carbon tetrabromide

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

EPITAXIAL FILMS;

FILM GROWTH;

EID: 0036071986     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01449-5     Document Type: Article

References (19)