A low phase noise silicon 9 GHz VCO and an 18 GHz push-push oscillator

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 695-698

  Dussopt, Laurent ^a   Guillois, Denis ^b   Rebeiz, Gabriel M ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b THALES Microwave   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; FREQUENCIES; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; TRANSISTORS;

LOW PHASE NOISE SILICON; MICROSTRIP RESONATOR; PUSH-PUSH OSCILLATOR;

MICROWAVE OSCILLATORS;

EID: 0036069874     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1011716     Document Type: Article

References (10)

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4. 25-42 GHz GaAs heterojunction bipolar transistor low phase noise push-push VCOs
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7. Radio-frequency oscillator having capacitively-coupled variable reactance device
8. An easy-to-use FET DRO design procedure suited to most CAD programs
9. SIEGET®25 silicon bipolar-dielectric resonator oscillator (DRO) at 10 GHz
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