Sampling circuit on silicon substrate for frequencies beyond 50 GHz

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2002, Pages 1681-1684

  Abele, P ^a   Birk, M ^b   Behammer, D ^c   Kibbel, H ^d   Trasser, A ^a   Maier, P ^e   Schad, K B ^a   Sonmez E ^a   Schumacher, H ^a  

^a UNIVERSITY OF ULM   (Germany)

^b AT AND T LABS RESEARCH   (United States)

^c United Monolithic Semiconductors GmbH   (Germany)

^d DAIMLER AG   (Germany)

^e Atmel Germany GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC CONDUCTIVITY; PULSE CIRCUITS; SILICON; TIME DOMAIN ANALYSIS; TRANSMISSION LINE THEORY;

CONVERSION LOSS; NONLINEAR TRANSMISSION LINE; SAMPLING CIRCUIT;

INTEGRATED CIRCUIT LAYOUT;

EID: 0036066160     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1012182     Document Type: Article

References (7)

1. Millimeter-wave on-wafer waveform and network measurements using active probes
2. DC-725 GHz sampling circuits and subpicosecond nonlinear transmission lines using elevated coplanar waveguide
3. Delta-doped schottky diode nonlinear transmission lines for 480-fs, 3.5-V transients
4. 500GHz GaAs MMIC sampling wafer probe
5. New topology of the GaAs non-linear transmission line(NLTL) using microstrip line technology
6. All-silicon nonlinear transmission line integrated into a Si/SiGe heterostructure bipolar transistor process
7. 275GHz 3-mask integrated GaAs sampling circuit